However, the toxicity of Cd and the scarcity of In and Ga would ultimately limit the terawatt-scale (TW)-scale deployment of these technologies. Furthermore, the potential research directions to overcome the bottlenecks of Sb 2Se 3 thin-film solar cell performance are also presented.Ĭonventional thin-film photovoltaic (PV) devices, such as cadmium telluride (CdTe), copper indium gallium selenide (Cu(In,Ga)Se 2) solar cells with demonstrated record efficiencies of 22.1% and 23.35%, respectively, exhibited the impressive achievements in the field of PVs. In this review, the fundamental properties of Sb 2Se 3 thin films, and the recent progress made in Sb 2Se 3 solar cells are outlined, with a special emphasis on the optimization of energy band alignments through the applications of electron-transporting layers and hole-transporting layers. Accordingly, constructing proper band alignments between Sb 2Se 3 and neighboring charge extraction layers through interface engineering to reduce carrier recombination losses is one of the key strategies to achieving high-efficiency Sb 2Se 3 solar cells. The inferior device performance of Sb 2Se 3 thin-film solar cells mainly results from a large open-circuit voltage deficit, which is strongly related to the interface recombination loss. The record power conversion efficiency of Sb 2Se 3 solar cells has currently reached 9.2%, however, it is far lower than the champion efficiencies of other chalcogenide thin-film solar cells such as CdTe (22.1%) and Cu(In,Ga)Se 2 (23.35%). Earth-abundant and environmentally benign antimony selenide (Sb 2Se 3) has emerged as a promising light-harvesting absorber for thin-film photovoltaic (PV) devices due to its high absorption coefficient, nearly ideal bandgap for PV applications, excellent long-term stability, and intrinsically benign boundaries if properly aligned on the substrate.
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